TITLE
THE PRE-WELL POTENTIAL AND CENTRAL WELL WİDTH EFFECTS ON A RESONANT TUNNELLING DIODE UNDER LASER FIELD
AUTHOR(S)
Hulya KES
ABSTRACT
A resonant tunneling diode, GaAs/In xGa 1-x As/Aly Ga 1-y As/GaAs/Al0.3Ga 0.7As/GaAs was studied under laser field. The effect of the pre-well potential In x Ga 1-x As on the current voltage characteristics was examined depending on the indium concentration. It has been observed that the current-voltage characteristic exhibits a critical value if the depth of the pre-well increased by increasing indium concentration. The electrons are accelerated for shallow pre-wells before that critical value and decelerated for deeper pre-wells than that of the critical value potential. In addition, the current is decreased increasing the width of the GaAs central well. The performance of the devices can be changed by applying a laser field when the geometric parameters are adjusted in resonant tunneling diodes.
DOI
PAGES
301-305
DOWNLOAD
https://unitechsp.tugab.bg/images/2023/7-FH/s17_p57_v1.pdf
How to cite this article:
Hulya KES, Taşkın TEZ, THE PRE-WELL POTENTIAL AND CENTRAL WELL WİDTH EFFECTS ON A RESONANT TUNNELLING DIODE UNDER LASER FIELD, Proceedings of International Scientific Conference “UNITECH 2023” – Gabrovo, 301-305