TITLE
PREDICTING WIND ENERGY PRODUCTION IN THE SHORT-TERM USING MACHINE LEARNING ALGORITHM
AUTHOR(S)
Sena Guler Ozkapi
ABSTRACT
In this study, the effect of Ge-doping on the electronic band structure of [111] oriented zinc-blende InP nanowires has been investigated using first-principles calculations based on density functional theory. The pure and H-passivated nanowires are formed to have a diameter of 1.5 nm. The doped InP nanowires are modeled by changing the position of the Ge atom. In place of In and P atoms, which are removed separately from different positions of the nanowire, Ge atoms are substituted. In order to determine the electronic properties, the band structures of all nanowires have been calculated. It is shown that the band structures obtained in the doping made by removing the In atom exhibit the character of an n-type semiconductor, while the band structures obtained in the doping made by removing the P atom form a p-type semiconductor.
DOI
PAGES
312-316
DOWNLOAD
https://unitechsp.tugab.bg/images/2023/7-FH/s17_p106_v2.pdf
How to cite this article:
Sena Guler Ozkapi, EFFECT OF Ge-DOPING POSITION ON THE ELECTRONIC BAND STRUCTURE OF InP NANOWIRE, Proceedings of International Scientific Conference “UNITECH 2023” – Gabrovo, 312-316